Search results for " anodic oxides"
showing 7 items of 7 documents
In situ stress, strain and dielectric measurements to understand electrostriction in anodic oxides
2014
Characterization of the Solid State Properties of Anodic Oxides on Magnetron Sputtered Ta, Nb and Ta-Nb Alloys
2012
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited Ta, Nb and Ta-Nb alloys of different compositions. A photoelectrochemical investigation was performed in order to estimate the band gap and the flat band potential of the oxides as a function of their composition. The band gap of the investigated Ta-Nb containing mixed oxides changed monotonically between those estimated for Ta2O5 (4.1 eV) and Nb2O5 (3.4 eV) and in agreement with a proposed correlation between the Band gap of an oxide and the difference of electronegativity of the oxide constituents. From the differential capacitance curves recorded in a wide range of electrode potentia…
Effect of ammonium hydroxide addition in the anodizing electrolyte on the electronic properties of anodic oxides on Niobium
2010
Characterization of the Solid State Properties of Anodic Oxides Grown on Sputter-deposited Al-Nb Alloys.
2012
ELECTROCHEMICAL FABRICATION OF METAL/OXIDE/CONDUCTING POLYMER JUNCTIONS FOR ELECTRONIC DEVICES
2014
Structural and Photocurrent Characterization of Anodic Oxides on Titanium
2010
Characterization of the Solid State Properties of Anodic Oxides on Ta-Nb Alloys as a Function of the Anodizing Conditions
2011
Tantalum oxide, niobium oxide and Ta-Nb containing mixed oxides were grown by anodizing sputter-deposited TaxNb(1-x) alloys with 0 ≤ x ≤ 1. A photoelectrochemical investigation was performed in order to estimate the band gap values of the oxides as a function of their composition as well as to estimate their flat band potential. Differential capacitance curves were recorded for all the investigated oxides in a wide range of electrode potential and for several frequencies of the alternative signal. The dependence of C on the applied potential and a.c. frequency was interpreted on the basis of amorphous semiconductor Schottky barrier, and allowed to estimate the dielectric constant of the inv…